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| SHINDENGEN Schottky Rectifiers (SBD) Dual DF40SC3L 30V 40A FEATURES *oe SMT OUTLINE DIMENSIONS Case : STO-200 Unit : mm *oe Tj150*Z *oe Low VF=0.45V *oe PRRSM avalanche guaranteed *oe High current capacity with Small Package APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z 30 V Maximum Reverse Voltage V RM V Voltage width 0.5ms, duty 1/40 35 V Repetitive Peak Surge ReverseRRSM Pulse Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=112*Z A IO 40 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Rating of per diode, Tj=25 400 A P Power 1000 W Repetitive Peak Surge ReverseRRSM Pulse width 10Es, Rating of per diode, Tj=25*Z *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions V I =15A, Pulse measurement, Rating of per diode Forward Voltage FF Reverse Current IR V=V , Pulse measurement, Rating of per diode R RM Junction Capacitance Cj f=1MHz,=10V, Rating of per diode RV AEjc junction to case Thermal Resistance Ratings Unit Max.0.45 V Max.17 mA Typ.1200 pF Max.1.5 *Z/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd DF40SC3L 100 Forward Voltage Tc=150C [MAX] Forward Current IF [A] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 10 Pulse measurement per diode 1 0 0.2 0.4 0.6 0.8 1 1.2 Forward Voltage VF [V] DF40SC3L Junction Capacitance f=1MHz Tc=25C TYP per diode 10000 Junction Capacitance Cj [pF] 1000 100 0.1 1 10 Reverse Voltage VR [V] DF40SC3L 10000 Reverse Current Tc=150C [MAX] 1000 Tc=150C [TYP] Reverse Current IR [mA] Tc=125C [TYP] 100 Tc=100C [TYP] Tc=75C [TYP] 10 1 Pulse measurement per diode 0.1 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] DF40SC3L 100 Reverse Power Dissipation Reverse Power Dissipation PR [W] 80 DC D=0.05 0.1 0.2 60 0.3 0.5 40 20 SIN 0.8 0 0 5 10 15 20 25 30 35 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T DF40SC3L 30 Forward Power Dissipation Forward Power Dissipation PF [W] 25 SIN 0.5 D=0.8 DC 20 0.2 15 0.05 0.1 0.3 10 5 0 0 10 20 30 40 50 60 70 Average Rectified Forward Current IO [A] Tj = 150C 0 tp D=tp /T T IO DF40SC3L 80 Derating Curve Average Rectified Forward Current IO [A] 70 DC 60 D=0.8 50 40 0.5 SIN 0.3 30 0.2 20 10 0 0.1 0.05 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 15V 0 0 IO VR tp D=tp /T T DF40SC3L 500 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 400 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 300 200 100 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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